STP65N150M9 Даташит - STMicroelectronics
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STP65N150M9
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12 Pages
File Size
224 kB
производитель
STMicroelectronics
Description
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
• Worldwide best FOM RDS(on)*Qg among silicon-based devices
• Higher VDSS rating
• Higher dv/dt capability
• Excellent switching performance
• Easy to drive
• 100% avalanche tested
• Zener-protected
Applications
• High efficiency switching applications
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