Description
The HM5257165B is a 512-Mbit SDRAM organized as 8388608-word × 16-bit × 4 bank. The HM5257805B is a 512-Mbit SDRAM organized as 16777216-word × 8-bit × 4 bank. The HM5257405B is a 512-Mbit SDRAM organized as 33554432-word × 4-bit × 4 bank. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP II.

FEATUREs
• 3.3 V power supply
• Clock frequency: 133 MHz/100 MHz (max)
• LVTTL interface
• Single pulsed RAS
• 4 banks can operate simultaneously and independently
• Burst read/write operation and burst read/single write operation capability
• Programmable burst length: 1/2/4/8
• 2 variations of burst sequence
    - Sequential (BL = 1/2/4/8)
    - Interleave (BL = 1/2/4/8)
• Programmable CAS latency: 2/3
• Byte control by DQM : DQM (HM5257805B/HM5257405B) : DQMU/DQML (HM5257165B)
• Refresh cycles: 8192 refresh cycles/64 ms
• 2 variations of refresh
    - Auto refresh
    - Self refresh
• Temperature range: 0 to 60°C