General Description
The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode.

FEATUREs
• 55 A, 30 V RDS(ON)max= 10.5 mΩ@ VGS= 10 V
                 RDS(ON)max= 13.0 mΩ@ VGS= 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (21nC typical)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability