FDD6680AS_NL Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDD6680AS_NL Datasheet PDF : 8 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy
Single Pulse, VDD = 15 V,
ID=13.5A
IAR
Drain-Source Avalanche Current
Off Characteristics
BVDSS
Drain–Source Breakdown
Voltage
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage
VGS = 0 V, ID = 1 mA
ID = 1 mA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = 1 mA
ID = 1 mA, Referenced to 25°C
VGS = 10 V,
ID = 12.5 A
VGS = 4.5 V, ID = 10 A
VGS= 10 V, ID = 12.5A, TJ= 125°C
VGS = 10 V,
VDS = 5 V
VDS = 15 V,
ID = 12.5 A
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg(TOT)
Qg
Total Gate Charge at Vgs=10V
Total Gate Charge at Vgs=5V
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDD = 15 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6 Ω
VDD = 15 V, ID = 12.5 A
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = 4.4 A (Note 2)
Voltage
VGS = 0 V, IS = 7 A
(Note 2)
trr
Diode Reverse Recovery Time IF = 12.5A,
diF/dt = 300 A/µs
(Note 3)
Qrr
Diode Reverse Recovery Charge
Min
30
1
50
Typ
54
29
1.4
–3
8.6
10.3
12.5
44
1200
350
120
1.6
10
6
28
12
14
13
20
11
21
11
3
4
0.5
0.6
17
11
Max Units
205 mJ
13.5
A
V
mV/°C
500
µA
±100 nA
3
V
mV/°C
10.5 mΩ
13.0
16.0
A
S
pF
pF
pF
Ω
20
ns
12
ns
45
ns
22
ns
25
ns
23
ns
32
ns
20
ns
29
nC
15
nC
nC
nC
4.4
A
0.7
V
nS
nC
FDD6680AS Rev A1 (X)
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