FDD6680AS_NL Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
FDD6680AS_NL Datasheet PDF : 8 Pages
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Typical Characteristics
100
VGS = 10V
80
6.0V
60
4.0V
4.5V
3.5V
40
3.0V
20
2.5V
0
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2
VGS = 3.0V
1.8
1.6
1.4
3.5V
4.0V
4.5V
1.2
5.0V
6.0V
10V
1
0.8
0
20
40
60
80
100
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = 12.5A
VGS =10V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.032
0.026
ID = 6.3A
0.02
0.014
TA = 125oC
TA =25oC
0.008
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VDS = 5V
80
100
VGS = 0V
10
60
40
TA = 125oC
-55oC
20
25oC
0
1
1.5
2
2.5
3
3.5
4
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
1
TA = 125oC
25oC
0.1
-55oC
0.01
0
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD6680AS Rev A1 (X)
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