General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.

FEATUREs
• 11.5 A, 30 V.
   RDS(ON) = 9.5 mΩ @ VGS = 4.5 V
   RDS(ON) = 8.5 mΩ @ VGS = 10 V
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability in a smaller footprint than SO8

APPLICATIONs
• Synchronous rectifier
• DC/DC converter