General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology.

FEATUREs
■ Very low on-state resistance
■ Q101 compliant
■ 150 °C rated
■ Standard level compatible

APPLICATIONs
■ Automotive systems
■ General purpose power switching
■ Motors, lamps and solenoids
■ 12 V and 24 V loads