BUK7880-55A(2007) Просмотр технического описания (PDF) - NXP Semiconductors.
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BUK7880-55A Datasheet PDF : 13 Pages
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NXP Semiconductors
BUK7880-55A
N-channel TrenchMOS standard level FET
50
003aab523
ID
VGS (V) = 20
(A)
15
40
12
10
9.5
9
30
8.5
8
7.5
20
7
6.5
6
10
5.5
5
4.5
0
0
2
4
6
8 VDS (V)10
100
RDSon
(mΩ)
90
80
70
60
50
40
5
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10
15
20
VGS (V)
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Tj = 25 °C; ID = 10 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
180
RDSon
(mΩ)
150
VGS (V) = 6
120
90
60
30
0
0
10
20
Tj = 25 °C
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8
10
20
30
40 ID (A) 50
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
2
03nc24
a
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20 60 100 140 180
Tj (°C)
a = -R---D----RS---o-D--n--S(--2o--5-n--°--C----)
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7880-55A_1
Product data sheet
Rev. 01 — 1 November 2007
© NXP B.V. 2007. All rights reserved.
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