BUK7880-55A(2007) Просмотр технического описания (PDF) - NXP Semiconductors.
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BUK7880-55A Datasheet PDF : 13 Pages
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NXP Semiconductors
BUK7880-55A
N-channel TrenchMOS standard level FET
5
VGS(th)
(V)
4
3
2
1
max
typ
min
03aa32
10−1
ID
(A)
10−2
10−3
10−4
10−5
03aa35
min typ max
0
−60
0
60
120
180
Tj (°C)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
10−6
0
2
4
6
VGS (V)
Tj = 25 °C; VDS = VGS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
9
003aab527
103
gfs
(S)
C
(pF)
8
003aab520
Ciss
Coss
7
102
Crss
6
5
5
10
15
ID (A) 20
Tj = 25 °C; VDS = 15 V
Fig 11. Forward transconductance as a function of
drain current; typical values
10
10-1
1
10
102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK7880-55A_1
Product data sheet
Rev. 01 — 1 November 2007
© NXP B.V. 2007. All rights reserved.
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