BUK7880-55A(2007) Просмотр технического описания (PDF) - NXP Semiconductors.

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BUK7880-55A
(Rev.:2007)

N-channel TrenchMOS standard level FET

NXP Semiconductors. 

BUK7880-55A

N-channel TrenchMOS standard level FET

Rev. 01 — 1 November 2007

Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package

using NXP General Purpose Automotive (GPA) TrenchMOS technology.

1.2 Features

I Very low on-state resistance

I 150 °C rated

I Q101 compliant

I Standard level compatible

1.3 Applications

I Automotive systems

I Motors, lamps and solenoids

I General purpose power switching

I 12 V and 24 V loads

1.4 Quick reference data

I EDS(AL)S ≤ 53 mJ

I ID ≤ 7 A

I RDSon = 68 mΩ (typ)

I Ptot ≤ 8 W

2. Pinning information

Table 1. Pinning

Pin Description

1

gate (G)

2

drain (D)

3

source (S)

4

solder point; connected to drain (D)

Simplified outline

4

1

2

3

sot223_so

SOT223 (SC-73)

Symbol

D

G

mbb076 S

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