LXE18400X Просмотр технического описания (PDF) - Philips Electronics
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LXE18400X Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN microwave power transistor
Product specification
LXE18400X
60
handbook, halfpage
PL
(W)
40
MLC438
(3) (2)
(1)
20
0
0
2
4
6
8
10
Pi (W)
(1) ICQ = 75 mA.
(2) ICQ = 150 mA.
(3) ICQ = 300 mA.
VCE = 24 V; f = 1850 MHz.
Fig.6 Load power as a function of input power.
15
handdbiomok, halfpage
(dBc)
20
MLC439
25
30
I CQ =
300 mA
35
40
150 mA
45
0
10
75 mA
20
30
40
Po (av) (W)
VCE = 24 V; f1 = 1850 MHz; f2 = 1850.2 MHz.
Fig.7 Intermodulation distortion as a function
of average output power.
Input and optimum load impedances
VCE = 24 V; ICQ = 0.15 mA; typical values at PL = PL1 (see Figs 8 and 9).
f
Zi
(GHz)
(Ω)
1.70
5.4 + j7.2
1.85
8.3 + j0.7
2.00
2.1 + j0.2
ZL
(Ω)
3.3 − j0.3
2.4 − j1.0
2.2 − j1.0
1999 Apr 22
7
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