LXE18400X Просмотр технического описания (PDF) - Philips Electronics

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LXE18400X

NPN microwave power transistor

Philips Electronics 

Philips Semiconductors

NPN microwave power transistor

Product specification

LXE18400X

handbook, full pagewidth

BIAS CIRCUIT

R1

TR1

R2

P1

R3 C7

D1

D2

PREMATCHING TEST

CIRCUIT

VCC

C6

C5

F1

L2

L1

DUT

Fig.5 Class AB bias circuit.

MEA600

List of components (see Figs 4 and 5)

COMPONENT

TR1

C1, C4

C2, C3

C5, C6

C7

D1

D2

L1

L2

P1

R1

R2

R3

F1

DESCRIPTION

transistor, BD239 or equivalent

DC blocking chip capacitor

trimmer capacitor

feedthrough bypass capacitor

electrolytic capacitor

diode BY239 or equivalent; note 1

diode BY239 or equivalent; note 2

4 turns 0.5 mm copper wire;

internal diameter = 2 mm

3 turns 0.5 mm copper wire;

internal diameter = 2 mm

linear potentiometer

resistor

resistor

resistor

ferrite bead

Rr

copper rivet

Notes

1. In thermal contact with TR1.

2. In thermal contact with DUT.

VALUE

ORDERING INFORMATION

100 pF

0.5 to 5.0 pF

1500 pF

10 µF, >30 V

ATC 100A1201kp

Tekelec 727-1

Erie 1250-003

4.7 kΩ

100 Ω, 0.25 W

10 kΩ, 0.25 W

56 Ω, 0.25 W

Philips tube, 12NC = 4330 030 43081

4.2 x 2.2 x 3.2 mm (4B1)

1999 Apr 22

6

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