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LXE18400X

NPN microwave power transistor

Philips Electronics 

Philips Semiconductors

NPN microwave power transistor

Product specification

LXE18400X

FEATURES

• Diffused emitter ballasting resistors

providing excellent current sharing

and withstanding a high VSWR

• Interdigitated structure provides

high emitter efficiency

• Gold metallization realizes very

good stability of the characteristics

and excellent lifetime

• Multicell geometry gives good

balance of dissipated power and

low thermal resistance

• Internal input and output

prematching ensures good stability

and allows an easier design of

wideband circuits.

QUICK REFERENCE DATA

Microwave performance up to Tmb = 25 °C in a common emitter class AB

amplifier.

MODE OF

f

VCE ICQ

PL1

Gpo

ηC

OPERATION (GHz) (V) (A) (W) (dB) (%)

Zi; ZL

(Ω)

Class AB (CW) 1.85 24 0.15 ≥39

≥7 typ. 42 see Figs

8 and 9

PINNING - SOT439A

PIN

DESCRIPTION

1

collector

2

base

3

emitter connected to flange

APPLICATION

handbook, 4 columns

1

Intended for use in common emitter,

class AB amplifiers in CW conditions

for military and professional

applications between 1.7 and 2 GHz.

3

DESCRIPTION

2

Top view

c

b

3

e

MAM045

NPN silicon planar epitaxial

microwave power transistor in a

SOT439A metal ceramic flange

package, with emitter connected to

flange.

Fig.1 Simplified outline and symbol.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.

1999 Apr 22

2

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