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LXE18400X

NPN microwave power transistor

Philips Electronics 

Philips Semiconductors

NPN microwave power transistor

Product specification

LXE18400X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

VCBO

VCER

VCEO

VEBO

IC

Pi

Ptot

Tstg

Tj

Tsld

PARAMETER

collector-base voltage

collector-emitter voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

input power

total power dissipation

storage temperature

junction temperature

soldering temperature

CONDITIONS

MIN. MAX. UNIT

open emitter

−

45 V

RBE = 220 Ω

open base

−

30 V

−

25 V

open collector

−

3

V

−

f = 1.85 GHz; VCE = 24 V; class AB −

Tmb = 75 °C

−

−65

−

9

A

12 W

70 W

+150 °C

200 °C

t ≤ 10 s; note 1

−

235 °C

Note

1. Up to 0.2 mm from ceramic.

10

handbook, halfpage

IC

(A)

1

MLC436

I

10 1

1

10

VCE (V)

10 2

Tmb ≤ 75 °C.

(I) Region of permissible DC operation.

Fig.2 DC SOAR.

handbook,8h0alfpage

P tot

(W)

60

MLC437

40

20

0

0

50

100

150

200

Tmb (oC)

Fig.3 Power derating curve.

1999 Apr 22

3

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