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LXE18400X

NPN microwave power transistor

Philips Electronics 

Philips Semiconductors

NPN microwave power transistor

Product specification

LXE18400X

THERMAL CHARACTERISTICS

SYMBOL

Rth j-mb

Rth mb-h

PARAMETER

CONDITIONS

thermal resistance from junction to mounting base Tj = 100 °C

thermal resistance from mounting base to heatsink

MAX.

1.3

0.2

UNIT

K/W

K/W

CHARACTERISTICS

Tmb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

ICBO

V(BR)CER

V(BR)CBO

V(BR)EBO

hFE

collector cut-off current

collector-emitter breakdown voltage

collector-base breakdown voltage

emitter-base breakdown voltage

DC current gain

CONDITIONS

IE = 0; VCB = 20 V

IC = 150 mA; RBE = 220 Ω

IC = 22 mA

IE = 22 mA

IC = 4.5 A; VCE = 3 V

MIN.

−

30

45

3

15

MAX.

4.5

−

−

−

100

UNIT

mA

V

V

V

APPLICATION INFORMATION

Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier.

MODE OF

f

VCE

ICQ

PL1

Gpo

OPERATION

(GHz)

(V)

(A)

(W)

(dB)

Class AB (CW) 1.85

24

0.15

≥39

≥7

typ. 44

typ. 7.8

ηC

(%)

typ. 42

Zi; ZL

(Ω)

see Figs 8 and 9

1999 Apr 22

4

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