BUK9510-55A Просмотр технического описания (PDF) - NXP Semiconductors.
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BUK9510-55A Datasheet PDF : 15 Pages
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NXP Semiconductors
BUK9510-55A
N-channel TrenchMOS logic level FET
100
ID
(A)
80
60
40
20
0
0
03nd73
Tj = 175 °C
Tj = 25 °C
1
2
3
4
VGS (V)
2.5
VGS(th)
(V)
2
1.5
1
max
typ
min
03aa33
0.5
0
-60
0
60
120
180
Tj (°C)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
25
03nd76
2
RDSon
(mΩ)
VGS (V) = 3 3.2 3.4 3.6 3.8 4
5
a
20
1.5
03ne89
15
1
10
0.5
5
0
0
50
100
150
200
250
ID (A)
0
-60
0
60
120
180
Tj (°C)
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
BUK9510-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 17 February 2011
© NXP B.V. 2011. All rights reserved.
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