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BUK9510-55A

N-channel TrenchMOS logic level FET

NXP Semiconductors. 

NXP Semiconductors

BUK9510-55A

N-channel TrenchMOS logic level FET

Table 1. Quick reference data …continued

Symbol Parameter

Conditions

Avalanche ruggedness

EDS(AL)S non-repetitive

drain-source avalanche

energy

Dynamic characteristics

ID = 75 A; Vsup ≤ 55 V;

RGS = 50 Ω; VGS = 5 V;

Tj(init) = 25 °C; unclamped

QGD

gate-drain charge

VGS = 5 V; ID = 25 A;

VDS = 44 V; Tj = 25 °C;

see Figure 13

[1] Continuous current is limited by package.

2. Pinning information

Min Typ Max Unit

-

-

333 mJ

-

28 -

nC

Table 2.

Pin

1

2

3

mb

Pinning information

Symbol Description

G

gate

D

drain

S

source

D

mounting base; connected to drain

Simplified outline

mb

Graphic symbol

D

G

mbb076 S

3. Ordering information

123

SOT78A (TO-220AB)

Table 3. Ordering information

Type number

Package

Name

BUK9510-55A

TO-220AB

Description

plastic single-ended package; heatsink mounted; 1 mounting

hole; 3-lead TO-220AB

Version

SOT78A

BUK9510-55A

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 02 — 17 February 2011

© NXP B.V. 2011. All rights reserved.

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