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BUK9510-55A

N-channel TrenchMOS logic level FET

NXP Semiconductors. 

BUK9510-55A

N-channel TrenchMOS logic level FET

Rev. 02 — 17 February 2011

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

„ AEC Q101 compliant

„ Low conduction losses due to low

on-state resistance

„ Suitable for logic level gate drive

sources

„ Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

„ 12 V and 24 V loads

„ Automotive and general purpose

power switching

„ Motors, lamps and solenoids

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

VDS

drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C

ID

drain current

VGS = 5 V; Tj = 25 °C;

see Figure 3; see Figure 1

Ptot

total power dissipation Tmb = 25 °C; see Figure 2

Static characteristics

RDSon

drain-source on-state

resistance

VGS = 4.5 V; ID = 25 A;

Tj = 25 °C

VGS = 10 V; ID = 25 A;

Tj = 25 °C

VGS = 5 V; ID = 25 A;

Tj = 25 °C; see Figure 11;

see Figure 12

Min Typ Max Unit

-

-

55 V

[1] -

-

75 A

-

-

200 W

-

-

11 mΩ

-

79

mΩ

-

8 10 mΩ

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