BUK9510-55A Просмотр технического описания (PDF) - NXP Semiconductors.
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BUK9510-55A Datasheet PDF : 15 Pages
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NXP Semiconductors
BUK9510-55A
N-channel TrenchMOS logic level FET
350
ID
(A)
300
VGS (V) = 10
250
200
150
100
50
0
0
2
4
03nd75
8
6
5
4
3
2.2
6
8
10
VDS (V)
12
RDSon
(mΩ)
10
8
6
3
03nf88
7
11
15
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10-1
ID
(A)
10-2
10-3
10-4
03aa36
min
typ
max
80
gfs
(S)
60
40
03nd72
20
10-5
10-6
0
1
2
3
VGS (V)
0
0
20
40
60
80
ID (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK9510-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 17 February 2011
© NXP B.V. 2011. All rights reserved.
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