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BUK9510-55A Datasheet PDF : 15 Pages
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NXP Semiconductors
BUK9510-55A
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
VGS(th)
gate-source threshold voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
LD
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
LS
internal source inductance
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
VDS = 55 V; VGS = 0 V; Tj = 25 °C
VDS = 55 V; VGS = 0 V; Tj = 175 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 25 A; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 175 °C;
see Figure 11; see Figure 12
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 25 °C;
see Figure 11; see Figure 12
ID = 25 A; VDS = 44 V; VGS = 5 V;
Tj = 25 °C; see Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
VDS = 30 V; RL = 1.2 Ω; VGS = 5 V;
RG(ext) = 10 Ω; Tj = 25 °C
from drain lead 6 mm from package
to centre of die ; Tj = 25 °C
from contact screw on mounting
base to centre of die ; Tj = 25 °C
from source lead to source bond
pad ; Tj = 25 °C
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
IS = 20 A; dIS/dt = -100 A/µs;
VGS = -10 V; VDS = 30 V; Tj = 25 °C
BUK9510-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 17 February 2011
Min Typ Max Unit
55 -
-
V
50 -
-
V
1
1.5 2
V
0.5 -
-
V
-
-
2.3 V
-
0.05 10 µA
-
-
500 µA
-
2
100 nA
-
2
100 nA
-
-
11
mΩ
-
-
20 mΩ
-
7
9
mΩ
-
8
10 mΩ
-
68
-
nC
-
8
-
nC
-
28 -
nC
-
3200 4307 pF
-
740 888 pF
-
490 680 pF
-
30
-
ns
-
155 -
ns
-
192 -
ns
-
139 -
ns
-
4.5 -
nH
-
3.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
77
-
ns
-
230 -
nC
© NXP B.V. 2011. All rights reserved.
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