IGB10N60T(2009) Просмотр технического описания (PDF) - Infineon Technologies

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IGB10N60T
(Rev.:2009)

Low Loss IGBT in TrenchStop® and Fieldstop technology

Infineon Technologies 

TrenchStop® Series

IGB10N60T

p

100ns

10ns

t d (o n )

t d (o ff)

tf

tr

1ns

0A

5A

10A

15A

20A

Figure 9.

IC, COLLECTOR CURRENT

Typical switching times as a

function of collector current

(inductive load, TJ=175°C,

VCE = 400V, VGE = 0/15V, RG = 23Ω,

Dynamic test circuit in Figure E)

100ns

10ns

td(on)

tr

t d (o ff)

tf

1ns

10Ω

20Ω

30Ω

40Ω

50Ω

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ = 175°C,

VCE= 400V, VGE = 0/15V, IC = 10A,

Dynamic test circuit in Figure E)

100ns

td(on)

10ns

tr

td(off)

tf

1ns

25°C 50°C 75°C 100°C 125°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE = 400V,

VGE = 0/15V, IC = 10A, RG=23Ω,

Dynamic test circuit in Figure E)

7V

6V

5V

typ.

max.

4V

m in .

3V

2V

1V

0V

-50°C

0°C

50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(IC = 0.3mA)

6

Rev. 1.2 12.08.2009

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