IGB10N60T(2009) Просмотр технического описания (PDF) - Infineon Technologies

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IGB10N60T
(Rev.:2009)

Low Loss IGBT in TrenchStop® and Fieldstop technology

Infineon Technologies 

Thermal Resistance

Parameter

Characteristic

IGBT thermal resistance,

junction – case

Thermal resistance,

junction – ambient

TrenchStop® Series

IGB10N60T

p

Symbol

RthJC

RthJA

Conditions

Footprint

6cm² Cu

Max. Value

Unit

1.35

K/W

65

40

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Static Characteristic

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Gate-emitter threshold voltage

Zero gate voltage collector current

Gate-emitter leakage current

Transconductance

Integrated gate resistor

V(BR)CES

VCE(sat)

VGE(th)

ICES

VGE=0V, IC=0.2mA

VGE = 15V, IC=10A

Tj=25°C

Tj=175°C

IC=0.3mA,VCE=VGE

VCE=600V,

VGE=0V

Tj=25°C

Tj=175°C

IGES

gfs

RGint

VCE=0V,VGE=20V

VCE=20V, IC=10A

min.

600

-

-

4.1

-

-

-

-

Value

typ.

-

1.5

1.8

4.6

-

-

-

6

none

Unit

max.

-V

2.05

-

5.7

µA

40

1000

100 nA

-S

Ω

Dynamic Characteristic

Input capacitance

Ciss

VCE=25V,

-

551

- pF

Output capacitance

Coss

VGE=0V,

-

24

-

Reverse transfer capacitance

Crss

f=1MHz

-

17

-

Gate charge

QGate

VCC=480V, IC=10A

-

62

- nC

VGE=15V

Internal emitter inductance

LE

-

7

- nH

measured 5mm (0.197 in.) from case

Short circuit collector current1)

IC(SC)

VGE=15V,tSC≤5μs

-

100

-A

VCC = 400V,

Tj = 25°C

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

2

Rev. 1.2 12.08.2009

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