IGB10N60T(2009) Просмотр технического описания (PDF) - Infineon Technologies

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IGB10N60T
(Rev.:2009)

Low Loss IGBT in TrenchStop® and Fieldstop technology

Infineon Technologies 

TrenchStop® Series

IGB10N60T

p

30A

25A VGE=20V

15V

20A

12V

10V

15A

8V

6V

10A

5A

0A

0V

1V

2V

3V

4V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic

(Tj = 25°C)

30A

25A

20A

VGE=20V

15V

12V

10V

15A

8V

6V

10A

5A

0A

0V

1V

2V

3V

4V

5V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 6. Typical output characteristic

(Tj = 175°C)

25A

20A

15A

10A

TJ=175°C

5A

25°C

0A

0V 2V 4V 6V 8V 10V

VGE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristic

(VCE=20V)

3,0V

2,5V

IC=20A

2,0V

1,5V

1,0V

IC=10A

IC=5A

0,5V

0,0V

-50°C

0°C

50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 8. Typical collector-emitter

saturation voltage as a function of

junction temperature

(VGE = 15V)

5

Rev. 1.2 12.08.2009

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