IGB10N60T(2009) Просмотр технического описания (PDF) - Infineon Technologies

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IGB10N60T
(Rev.:2009)

Low Loss IGBT in TrenchStop® and Fieldstop technology

Infineon Technologies 

TrenchStop® Series

IGB10N60T

p

Switching Characteristic, Inductive Load, at Tj=25 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=25°C,

VCC=400V,IC=10A,

VGE=0/15V,

RG=23Ω,

Lσ2)=60nH,

Cσ2)=40pF

Energy losses include

“tail” and diode

reverse recovery.

min.

-

-

-

-

-

-

-

Value

typ.

12

8

215

38

0.16

0.27

0.43

Unit

max.

- ns

-

-

-

- mJ

-

-

Switching Characteristic, Inductive Load, at Tj=175 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=175°C,

VCC=400V,IC=10A,

VGE=0/15V,

RG= 23Ω

Lσ1)=60nH,

Cσ1)=40pF

Energy losses include

“tail” and diode

reverse recovery.

min.

-

-

-

-

-

-

-

Value

typ.

10

11

233

63

0.26

0.35

0.61

Unit

max.

- ns

-

-

-

- mJ

-

-

2) Leakage inductance Lσ an d Stray capacity C σ due to dynamic test circuit in Figure E.

1) Leakage inductance Lσ an d Stray capacity C σ due to dynamic test circuit in Figure E.

3

Rev. 1.2 12.08.2009

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