IGB10N60T(2009) Просмотр технического описания (PDF) - Infineon Technologies

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IGB10N60T
(Rev.:2009)

Low Loss IGBT in TrenchStop® and Fieldstop technology

Infineon Technologies 

TrenchStop® Series

IGB10N60T

p

i,v

di /dt

F

I

F

I

rrm

t =t +t

rr S F

Q =Q +Q

rr

S

F

t

rr

t

t

S

F

QQ

S

F

10% I

t

rrm

di /dt V

90% I r r

R

rrm

Figure A. Definition of switching times

Figure C. Definition of diodes

switching characteristics

τ1

r1

Tj (t)

p(t)

r1

τ2

r2

r2

τn

rn

rn

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses

11

Figure E. Dynamic test circuit

Leakage inductance Lσ =60nH

a nd Stray capacity Cσ =40pF.

Rev. 1.2 12.08.2009

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