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PDI1394P25BY Просмотр технического описания (PDF) - Philips Electronics

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PDI1394P25BY
Philips
Philips Electronics Philips
PDI1394P25BY Datasheet PDF : 42 Pages
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Philips Semiconductors
1-port 400 Mbps physical layer interface
Product data
PDI1394P25BY
C9
XI
24.576 MHz
X1
ls
C10
CPHY + CBD
XO
SV01808
Figure 11. Load Capacitance for the PDI1394P25 PHY
NOTE: The layout of the crystal portion of the PHY circuit is
important for obtaining the correct frequency, minimizing noise
introduced into the PHY’s Phase Lock Loop, and minimizing any
emissions from the circuit. The crystal and two load capacitors
should be considered as a unit during layout. The crystal and load
capacitors should be placed as close as possible to one another
while minimizing the loop area created by the combination of the
three components. Varying the size of the capacitors may help in
this. Minimizing the loop area minimizes the effect of the resonant
current (Is) that flows in this resonant circuit. This layout unit (crystal
and load capacitors) should then be placed as close as possible to
the PHY XI and XO terminals to minimize trace lengths.
C9
C10
X1
SV01809
Figure 12. Recommended Crystal and Capacitor Layout
It is strongly recommended that part of the verification process for
the design be to measure the frequency of the SYSCLK output of
the PHY. This should be done with a frequency counter with an
accuracy of 6 digits or better. If the SYSCLK frequency is more than
the crystal’s tolerance from 49.152 MHz, the load capacitance of the
crystal may be varied to improve frequency accuracy. If the
frequency is too high add more load capacitance; if the frequency is
too low decrease load capacitance. Typically, changes should be
done to both load capacitors (C9 and C10 above) at the same time,
and both should be of the same value. Additional design details and
requirements may be provided by the crystal vendor.
2002 Oct 11
23

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