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M25P10

1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface

STMicroelectronics 

M25P10

Figure 13. SE: Sector Erase Sequence

S

0123456789

29 30 31

C

INSTRUCTION

24 BIT ADDRESS

D

23 22

210

MSB

Note: 1. Address bits A23 to A17 are Don’t Care on the M25P10 series.

AI03751

the device once the Hardware Protected Mode is

entered.

The timing sequence is shown in Figure 10.

Sector Erase (SE)

Prior to any Sector Erase attempt, a write enable

instruction (WREN) must have been previously

sent (the S input driven low, WREN instruction

properly transmitted and the S input driven high).

After the WREN instruction decoding, the memory

sets the Write Enable Latch (WEL) which allows

the execution of any further Sector Erase. The

Sector Erase instruction is entered by driving the

Chip select input (S) low, followed by the

instruction byte and 3 address bytes on Data In

input (D). Any address of the Sector (see Table 4)

is a valid address for the Sector Erase instruction.

The Chip Select input (S) must be driven low for

the entire duration of the sequence. The device

must be deselected just after the eighth bit of the

last address byte has been latched in. If not, the

Sector Erase instruction is not executed. As soon

as the device is deselected, the self-timed Sector

Erase cycle (tSE) is initiated. While the Sector

Erase cycle is in progress, the status register may

be read to check the WIP bit value. WIP is high

during the self-timed Sector Erase cycle and is low

when it is completed. When the cycle is

completed, the write enable latch (WEL) is reset.

A Sector Erase instruction applied to a Sector

which is software protected by the BPi bits (see

Table 4 and Table 5) is not initiated.

The timing sequence is shown in Figure 13.

Bulk Erase (BE)

Prior to any Bulk Erase attempt, a write enable

instruction (WREN) must have been previously

sent (the S input driven low, WREN instruction

properly transmitted and the S input driven high).

After the WREN instruction decoding, the memory

Figure 14. BE: Bulk Erase Sequence

S

01234567

C

INSTRUCTION

D

10/21

AI03752

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