G50T60 Просмотр технического описания (PDF) - Infineon Technologies

Номер в каталоге

Компоненты Описание

Список матч

G50T60

Low Loss IGBT in Trench and Fieldstop technology

Infineon Technologies 

IGP50N60T, IGB50N60T

TrenchStop Series

IGW50N60T

15V

120V

480V

10V

5V

0 V0 n C

100nC

200nC

300nC

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC=50 A)

C iss

1nF

100pF

C oss

C rss

0V

10V 20V 30V 40V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

800A

700A

600A

500A

400A

300A

200A

100A

0 A1 2 V

14V

16V

18V

VGE, GATE-EMITTETR VOLTAGE

Figure 19. Typical short circuit collector

current as a function of gate-

emitter voltage

(VCE ≤ 400V, Tj ≤ 150°C)

12µs

10µs

8µs

6µs

4µs

2µs

0µs

10V

11V

12V

13V

14V

VGE, GATE-EMITETR VOLTAGE

Figure 20. Short circuit withstand time as a

function of gate-emitter voltage

(VCE=600V, start at TJ=25°C,

TJmax<150°C)

Power Semiconductors

8

Rev. 2.2 Dec-04

Share Link: