G50T60 Просмотр технического описания (PDF) - Infineon Technologies

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G50T60

Low Loss IGBT in Trench and Fieldstop technology

Infineon Technologies 

IGP50N60T, IGB50N60T

TrenchStop Series

IGW50N60T

8.0mJ

*) Eon and Ets include losses

due to diode recovery

6.0mJ

Ets*

*) Eon and Ets include losses

6.0m J

due to diode recovery

E ts*

5.0m J

Eon*

4.0m J

4.0mJ

2.0mJ

3.0m J

Eoff

E off

2.0m J

1.0m J

E on*

0.0mJ

0A

20A

40A

60A

80A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, RG = 7Ω,

Dynamic test circuit in Figure E)

0.0m J

0Ω

10Ω

20Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, IC = 50A,

Dynamic test circuit in Figure E)

*) Eon and Ets include losses

due to diode recovery

3.0mJ

2.0mJ

Eoff

1.0mJ Eon*

*) Eon and Ets include losses

due to diode recovery

Ets*

4mJ

3mJ

E ts*

2mJ

1mJ

E on*

E off

0.0mJ

25°C 50°C 75°C 100°C 125°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, VCE = 400V,

VGE = 0/15V, IC = 50A, RG = 7Ω,

Dynamic test circuit in Figure E)

0mJ

300V 350V 400V 450V 500V 550V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

(inductive load, TJ = 175°C,

VGE = 0/15V, IC = 50A, RG = 7Ω,

Dynamic test circuit in Figure E)

Power Semiconductors

7

Rev. 2.2 Dec-04

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