G50T60 Просмотр технического описания (PDF) - Infineon Technologies

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G50T60

Low Loss IGBT in Trench and Fieldstop technology

Infineon Technologies 

IGP50N60T, IGB50N60T

TrenchStop Series

IGW50N60T

120A

100A VGE=20V

15V

80A

13V

11V

60A

9V

7V

40A

20A

0A

0V

1V

2V

3V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic

(Tj = 25°C)

120A

100A VGE=20V

15V

80A

13V

11V

60A

9V

7V

40A

20A

0A

0V

1V

2V

3V

4V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 6. Typical output characteristic

(Tj = 175°C)

80A

60A

40A

20A

T J= 1 7 5 °C

25°C

0A

0V

2V

4V

6V

8V

VGE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristic

(VCE=20V)

2.5V

2.0V

1.5V

1.0V

IC=100A

IC=50A

IC=25A

0.5V

0.0V

0°C

50°C

100°C

150°C

TJ, JUNCTION TEMPERATURE

Figure 8. Typical collector-emitter

saturation voltage as a function of

junction temperature

(VGE = 15V)

Power Semiconductors

5

Rev. 2.2 Dec-04

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