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G50T60

Low Loss IGBT in Trench and Fieldstop technology

Infineon Technologies 

IGP50N60T, IGB50N60T

TrenchStop Series

IGW50N60T

Low Loss IGBT in Trench and Fieldstop technology

• Very low VCE(sat) 1.5 V (typ.)

• Maximum Junction Temperature 175 °C

• Short circuit withstand time – 5µs

• Designed for :

- Frequency Converters

- Uninterrupted Power Supply

• Trench and Fieldstop technology for 600 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed

- low VCE(sat)

• Positive temperature coefficient in VCE(sat)

• Low EMI

• Low Gate Charge

P-TO-220-3-1

(TO-220AB)

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

C

G

E

P-TO-247-3-1

(TO-220AC)

P-TO-263-3-2 (D²-PAK)

(TO-263AB)

Type

VCE

IC

VCE(sat),Tj=25°C

Tj,max

Marking Code

IGP50N60T 600 V 50 A

1.5 V

175 °C

G50T60

IGB50N60T 600 V 50 A

1.5 V

175 °C

G50T60

IGW50N60T 600 V 50 A

1.5 V

175 °C

G50T60

Maximum Ratings

Parameter

Symbol

Collector-emitter voltage

DC collector current, limited by Tjmax

TC = 25°C

TC = 100°C

Pulsed collector current, tp limited by Tjmax

Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)

Gate-emitter voltage

Short circuit withstand time1)

VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C

Power dissipation TC = 25°C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

VCE

IC

ICpuls

-

VGE

tSC

Ptot

Tj

Tstg

-

Package Ordering Code

TO-220 Q67040S4723

TO-263 Q67040S4721

TO-247 Q67040S4725

Value

Unit

600

V

A

100

50

150

150

±20

V

5

µs

333

W

-40...+175

°C

-55...+175

260

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors

1

Rev. 2.2 Dec-04

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