G50T60 Просмотр технического описания (PDF) - Infineon Technologies

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G50T60

Low Loss IGBT in Trench and Fieldstop technology

Infineon Technologies 

IGP50N60T, IGB50N60T

TrenchStop Series

IGW50N60T

td(off)

td(off)

100ns

tf

tr

td(on)

10ns

0A

20A

40A

60A

80A

Figure 9.

IC, COLLECTOR CURRENT

Typical switching times as a

function of collector current

(inductive load, TJ=175°C,

VCE = 400V, VGE = 0/15V, RG = 7Ω,

Dynamic test circuit in Figure E)

100ns

tf

tr

td(on)

10ns

0Ω

5Ω

10Ω

15Ω

20Ω

25Ω

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ = 175°C,

VCE= 400V, VGE = 0/15V, IC = 50A,

Dynamic test circuit in Figure E)

t d (o ff)

100ns

tf

tr

t d (o n )

10ns

25°C 50°C 75°C 100°C 125°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE = 400V,

VGE = 0/15V, IC = 50A, RG=7Ω,

Dynamic test circuit in Figure E)

7V

6V

max.

typ.

5V

4V min.

3V

2V

1V

0V

-50°C

0°C

50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(IC = 0.8mA)

Power Semiconductors

6

Rev. 2.2 Dec-04

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