BUK9214-75B Просмотр технического описания (PDF) - Philips Electronics
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BUK9214-75B Datasheet PDF : 10 Pages
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Philips Semiconductors
BUK9214-75B
TrenchMOS™ logic level FET
2.5
VGS(th)
(V)
2.0
1.5
1.0
max
typ
min
03ng52
10-1
ID
(A)
10-2
-3
10
10-4
03ng53
min
typ
max
0.5
10-5
0.0
-60
0
60
120
180
Tj (ºC)
ID = 1 mA; VDS = VGS
Fig 5. Gate-source threshold voltage as a function of
junction temperature.
10-6
0
0.5
1
1.5
2
2.5
3
VGS (V)
Tj = 25 °C; VDS = VGS
Fig 6. Sub-threshold drain current as a function of
gate-source voltage.
03nb25
2.4
a
1.6
0.8
0
-60
0
60
120 Tj (°C) 180
a = -R---D----RS---oD---n-S-(--o2--5-n--°--C---)
Fig 7. Normalized drain-source on-state resistance factor as a function of junction temperature.
9397 750 10801
Objective data
Rev. 01 — 10 December 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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