BUK9214-75B Просмотр технического описания (PDF) - Philips Electronics
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BUK9214-75B Datasheet PDF : 10 Pages
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Philips Semiconductors
BUK9214-75B
TrenchMOS™ logic level FET
5. Characteristics
Table 4: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Static characteristics
V(BR)DSS drain-source breakdown
ID = 0.25 mA; VGS = 0 V
voltage
Tj = 25 °C
75
Tj = −55 °C
70
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 5
Tj = 25 °C
1.1
Tj = 175 °C
0.5
Tj = −55 °C
-
IDSS
drain-source leakage current VDS = 75 V; VGS = 0 V
Tj = 25 °C
-
Tj = 175 °C
-
IGSS
gate-source leakage current VGS = ±15 V; VDS = 0 V
-
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 25 A;
Figure 7
Dynamic characteristics
Tj = 25 °C
-
Tj = 175 °C
-
VGS = 4.5 V; ID = 25 A
-
VGS = 10 V; ID = 25 A
-
Qg(tot)
total gate charge
VGS = 5 V; VDS = 60 V;
-
Qgs
gate-source charge
ID = 25 A;
-
Qgd
gate-drain (Miller) charge
-
Ciss
input capacitance
VGS = 0 V; VDS = 25 V;
-
Coss
output capacitance
f = 1 MHz;
-
Crss
reverse transfer capacitance
-
td(on)
tr
turn-on delay time
rise time
VDS = 30 V; RL = 1.2 Ω;
-
VGS = 5 V; RG = 10 Ω
-
td(off)
turn-off delay time
-
tf
fall time
-
Ld
internal drain inductance
measured from drain to
-
centre of die
Ls
internal source inductance measured from source lead
-
to source bond pad
Source-drain diode
VSD
source-drain (diode forward) IS = 10 A; VGS = 0 V;
-
voltage
Figure 7
trr
reverse recovery time
IS = 20 A; dIS/dt = −100 A/µs
-
Qr
recovered charge
VGS = −10 V; VDS = 30 V
-
9397 750 10801
Objective data
Rev. 01 — 10 December 2002
Typ
Max
Unit
-
-
V
-
-
V
1.5
2
V
-
-
V
-
2.3
V
0.02
1
µA
-
500
µA
2
100
nA
11.9
14
mΩ
-
29
mΩ
-
15.5
mΩ
10.7
12
mΩ
32
-
nC
6
-
nC
13
-
nC
3 022
4 029
pF
290
348
pF
115
158
pF
tbf
-
nS
tbf
-
nS
tbf
-
nS
tbf
-
nS
2.5
-
nH
7.5
-
nH
0.85
1.2
V
tbf
-
ns
tbf
-
nC
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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