BUK9214-75B Просмотр технического описания (PDF) - Philips Electronics
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BUK9214-75B Datasheet PDF : 10 Pages
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Philips Semiconductors
BUK9214-75B
TrenchMOS™ logic level FET
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max Unit
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 kΩ
Tmb = 25 °C; VGS = 5 V;
Figure 2 and 3
-
75
V
-
75
V
-
±15
V
-
71
A
IDM
peak drain current
Tmb = 100 °C; VGS = 5 V; Figure 2
-
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
-
Figure 3
50
A
285
A
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
Tmb = 25 °C; Figure 1
-
150
W
−55
+175 °C
−55
+175 °C
IDR
reverse drain current (DC)
IDRM
peak reverse drain current
Avalanche ruggedness
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp ≤ 10 µs
-
71
A
-
285
A
EDS(AL)S
non-repetitive avalanche energy
unclamped inductive load; ID = 75 A;
-
VDS ≤ 75 V; VGS = 5 V; RGS = 50 Ω;
starting Tj = 25 °C
131
mJ
9397 750 10801
Objective data
Rev. 01 — 10 December 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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