BUK9214-75B Просмотр технического описания (PDF) - Philips Electronics
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BUK9214-75B Datasheet PDF : 10 Pages
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Philips Semiconductors
BUK9214-75B
TrenchMOS™ logic level FET
120
Pder
(%)
80
40
03na19
80
ID
(A)
60
40
20
03nl10
0
0
50
100
150
200
Tmb (°C)
Pder = P-------P----t--o---t------- × 100%
t o t ( 25 °C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
0
0
50
VGS ≥ 5 V
100
150
200
Tmb (°C)
Fig 2. Continuous drain current as a function of
mounting base temperature.
103
ID
(A)
102
limit RDSon = VDS/ID
tp = 10 µ s
100 µ s
03nk99
10
1
1
DC
10
1 ms
10 ms
100 ms
102
VDS (V)
103
Tmb = 25 °C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 10801
Objective data
Rev. 01 — 10 December 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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