BUK9510-100B Просмотр технического описания (PDF) - Philips Electronics
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BUK9510-100B Datasheet PDF : 15 Pages
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Philips Semiconductors
BUK95/9610-100B
TrenchMOS™ logic level FET
100
ID
(A)
80
60
03ng63
5
VGS
(V)
4
3
VDD = 14 V
03ng61
VDD = 80 V
40
2
20
Tj = 175 ºC
Tj = 25 ºC
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS (V)
1
0
0
20
40
60
80
100
QG (nC)
VDS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj = 25 °C; ID = 25 A
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
100
IS
(A)
80
03ng60
60
40
20
0
0.0
Tj = 175 ºC
0.2
0.4
0.6
Tj = 25 ºC
0.8
1.0
VSD (V)
VGS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 10282
Product data
Rev. 02 — 8 October 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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