BUK9510-100B Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
Список матч
BUK9510-100B Datasheet PDF : 15 Pages
| |||
Philips Semiconductors
BUK95/9610-100B
TrenchMOS™ logic level FET
300
ID
10
(A)
5
250
200
03ng65
4
10
RDSon
(mΩ)
9
03ng64
150
VGS = 3 V
100
8
50
0
2.2
0
2
4
6
8
10
VDS (V)
7
0
5
10
15
VGS (V)
Tj = 25 °C; tp = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C; ID = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
15
RDSon
(mΩ)
14
03ng66
2.5
a
13
VGS = 3 V 3.2 3.4 3.6 4 5 10
2
03ng41
12
1.5
11
1
10
0.5
9
8
0
50 100 150 200 250 300
ID (A)
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (ºC)
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 10282
Product data
Rev. 02 — 8 October 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
7 of 15
Share Link: 