BUK9510-100B Просмотр технического описания (PDF) - Philips Electronics
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BUK9510-100B Datasheet PDF : 15 Pages
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Philips Semiconductors
BUK95/9610-100B
TrenchMOS™ logic level FET
5. Characteristics
Table 4: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Static characteristics
V(BR)DSS drain-source breakdown
ID = 0.25 mA; VGS = 0 V
voltage
Tj = 25 °C
100
Tj = −55 °C
89
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
Tj = 25 °C
1.1
Tj = 175 °C
0.5
Tj = −55 °C
-
IDSS
drain-source leakage current VDS = 100 V; VGS = 0 V
Tj = 25 °C
-
Tj = 175 °C
-
IGSS
gate-source leakage current VGS = ±15 V; VDS = 0 V
-
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 25 A;
Figure 7 and 8
Dynamic characteristics
Tj = 25 °C
-
Tj = 175 °C
-
VGS = 4.5 V; ID = 25 A
-
VGS = 10 V; ID = 25 A
-
Qg(tot)
total gate charge
VGS = 5 V; VDD = 80 V;
-
Qgs
gate-to-source charge
ID = 25 A; Figure 14
-
Qgd
gate-to-drain (Miller) charge
-
Ciss
input capacitance
VGS = 0 V; VDS = 25 V;
-
Coss
output capacitance
f = 1 MHz; Figure 12
-
Crss
reverse transfer capacitance
-
td(on)
tr
turn-on delay time
rise time
VDD = 30 V; RL = 1.2 Ω;
-
VGS = 5 V; RG = 10 Ω
-
td(off)
turn-off delay time
-
tf
fall time
-
Ld
internal drain inductance
from drain lead 6 mm from
-
package to center of die
from contact screw on
-
mounting base to center of
die SOT78
from upper edge of drain
-
mounting base to center of
die SOT404
Ls
internal source inductance from source lead to source
-
bond pad
9397 750 10282
Product data
Rev. 02 — 8 October 2002
Typ
Max
Unit
-
-
V
-
-
V
1.5
2
V
-
-
V
-
2.3
V
0.02
1
µA
-
500
µA
2
100
nA
8.6
-
-
8.3
86
16
32
8 284
676
237
60
110
250
94
4.5
3.5
10
mΩ
25
mΩ
11
mΩ
9.7
mΩ
-
nC
-
nC
-
nC
11 045
pF
811
pF
325
pF
-
ns
-
ns
-
ns
-
ns
-
nH
-
nH
2.5
-
nH
7.5
-
nH
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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