BUK9510-100B Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
Список матч
BUK9510-100B Datasheet PDF : 15 Pages
| |||
Philips Semiconductors
BUK95/9610-100B
TrenchMOS™ logic level FET
Table 4: Characteristics…continued
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Source-drain diode
VSD
source-drain (diode forward) IS = 40 A; VGS = 0 V;
-
voltage
Figure 15
trr
reverse recovery time
IS = 20 A; dIS/dt = −100 A/µs
-
Qr
recovered charge
VGS = −10 V; VDS = 30 V
-
Typ
Max
Unit
0.85
1.2
V
78
-
ns
268
-
nC
9397 750 10282
Product data
Rev. 02 — 8 October 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
6 of 15
Share Link: 