BUK9510-100B Просмотр технического описания (PDF) - Philips Electronics
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BUK9510-100B Datasheet PDF : 15 Pages
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Philips Semiconductors
BUK95/9610-100B
TrenchMOS™ logic level FET
2.5
VGS(th)
(V)
2.0
1.5
1.0
max
typ
min
03ng52
10-1
ID
(A)
10-2
-3
10
10-4
03ng53
min
typ
max
0.5
10-5
0.0
-60
0
60
120
180
Tj (ºC)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
10-6
0
0.5
1
1.5
2
2.5
3
VGS (V)
Tj = 25 °C; VDS = VGS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
200
gfs
(S)
150
03ng62
100
50
0
0
20
40
60
80
ID (A)
Tj = 25 °C; VDS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values.
12000
C
(pF)
Ciss
10000
03ng67
8000
6000
4000
2000
Coss
Crss
0
10-1
1
10
102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 10282
Product data
Rev. 02 — 8 October 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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