DESCRIPTION
The device is a single 3.3 V 1-Gbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only
Memory (NAND E2PROM) organized as 528 bytes u32 pages u4096 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes 512 bytes: 528 bytes u32 pages). 

x Organization
   Memory cell allay  528 u128K u8
   Register 528 u8
   Page size  528 bytes
   Block size  (16K 512) bytes
x Modes
   Read, Reset, Auto Page Program,
   Auto Block Erase, Status Read, 
   Multi Block Program, Multi Block Erase
x Mode control
   Serial input/output
   Command control
x Power supply  VCC 2.7 V to 3.6 V
x Program/Erase Cycles  1E5 cycle (with ECC)
x Access time
   Cell array to register 25 Ps max
   Serial Read Cycle  50 ns min
x Operating current
   Read (50 ns cycle)  10 mA typ.
   Program (avg.)  10 mA typ.
   Erase (avg.)  10 mA typ.
   Standby 50 PA max.
x Package
   TSOPI48-P-1220-0.50 (Weight: 0.53g typ.)