32 GBIT (4G × 8 BIT) CMOS NAND E2PROM

DESCRIPTION
The TH58NVG5S0F is a single 3.3V 32 Gbit (36,305,895,424 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 16384 blocks. The device has two 4328-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4328-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 14.5 Kbytes: 4328 bytes × 64 pages).
The TH58NVG5S0F is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

FEATURES
• Organization
   x8
   Memory cell array 4328 × 256K × 8 × 4
   Register 4328 × 8
   Page size 4328 bytes
   Block size (256K + 14.5K) bytes
• Modes
   Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
   Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
• Mode control
   Serial input/output
   Command control
• Number of valid blocks
   Min 16064 blocks
   Max 16384 blocks
• Power supply
   VCC = 2.7V to 3.6V
• Access time
   Cell array to register 30 µs max
   Serial Read Cycle 25 ns min (CL=100pF)
• Program/Erase time
   Auto Page Program 300 µs/page typ.
   Auto Block Erase 3 ms/block typ.
• Operating current
   Read (25 ns cycle) 30 mA max.
   Program (avg.) 30 mA max
   Erase (avg.) 30 mA max
   Standby 200 µA max
• Package
   TSOP I 48-P-1220-0.50C
• 4bit ECC for each 512Byte is required.