STW26NM60N(2016) Даташит - STMicroelectronics
Номер в каталоге
STW26NM60N
Other PDF
PDF
page
12 Pages
File Size
656.1 kB
производитель
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
APPLICATIONs
• Switching applications
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Компоненты Описание
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производитель
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