STW26NM60N(2016) Просмотр технического описания (PDF) - STMicroelectronics

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STW26NM60N
(Rev.:2016)

N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in a TO-247 package

STMicroelectronics 

Test circuits

3

Test circuits

Figure 13: Test circuit for resistive load

switching times

STW26NM60N

Figure 14: Test circuit for gate charge

behavior

Figure 15: Test circuit for inductive load

switching and diode recovery times

Figure 16: Unclamped inductive load test

circuit

Figure 17: Unclamped inductive waveform

Figure 18: Switching time waveform

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