Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

FEATUREs
• Fully insulated and low profile package with
   increased creepage path from pin to
   heatsink plate
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance

APPLICATIONs
• Switching applications