STF6N80K5 Даташит - STMicroelectronics
Номер в каталоге
STF6N80K5
Компоненты Описание
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page
15 Pages
File Size
791.3 kB
производитель
STMicroelectronics
Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
FEATUREs
• Industry’s lowest RDS(on)
• Industry’s best figure of merit (FoM)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
Номер в каталоге
Компоненты Описание
PDF
производитель
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