STF6N80K5 Просмотр технического описания (PDF) - STMicroelectronics

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STF6N80K5

N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh™ K5 Power MOSFETs in TO-220FP and I²PAKFP packages

STMicroelectronics 

STF6N80K5,

STFI6N80K5

N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh™ K5

Power MOSFETs in TO-220FP and I²PAKFP packages

Datasheet - production data

3

2

1

TO-220FP

1 23

I 2 PAKFP

Figure 1. Internal schematic diagram

D(2)

Features

Order code

STF6N80K5

STFI6N80K5

VDS RDS(on)max ID

800 V

1.6 Ω

4.5 A

PTOT

25 W

• Industry’s lowest RDS(on)

• Industry’s best figure of merit (FoM)

• Ultra low gate charge

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

G(1)

S(3)

AM01476v1

Description

These very high voltage N-channel Power

MOSFETs are designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

Order code

STF6N80K5

STFI6N80K5

Table 1. Device summary

Marking

Package

6N80K5

TO-220FP

I2PAKFP

Packing

Tube

September 2016

This is information on a product in full production.

DocID024664 Rev 4

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