STF6N80K5 Просмотр технического описания (PDF) - STMicroelectronics

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STF6N80K5

N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh™ K5 Power MOSFETs in TO-220FP and I²PAKFP packages

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STF6N80K5, STFI6N80K5

(TCASE = 25 °C unless otherwise specified).

Symbol

Parameter

Table 4. On/off states

Test conditions

V(BR)DSS

Drain-source breakdown

voltage (VGS = 0)

ID = 1 mA

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 800 V

VDS = 800 V, Tj = 125 °C(1)

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20 V

VGS(th) Gate threshold voltage

VDS = VGS, ID = 100 µA

Static drain-source

RDS(on) on-resistance

VGS = 10 V, ID = 2 A

1. Defined by design, not subject to production test.

Min. Typ. Max. Unit

800

V

1 µA

50 µA

±10 µA

3

4

5

V

1.3 1.6 Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 100 V,

f = 1 MHz,

VGS = 0

- 270 - pF

- 25 - pF

- 0.7 - pF

Co(tr)(1)

Equivalent capacitance time

related

- 38 - pF

Co(er)(2)

Equivalent capacitance

energy related

VGS = 0, VDS = from 0 to 640 V

- 16 - pF

RG Intrinsic gate resistance

f = 1 MHz, ID = 0

- 7.5 -

Ω

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 640 V, ID = 4.5 A

VGS = 10 V

(see Figure 15: Gate charge

test circuit)

- 13 - nC

- 2.1 - nC

- 9.6 - nC

1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss

when VDS increases from 0 to 80% VDSS

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DocID024664 Rev 4

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