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STB45N60DM2AG Даташит - STMicroelectronics

STB45N60DM2AG image

Номер в каталоге
STB45N60DM2AG

Other PDF
  2015  

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page
15 Pages

File Size
396.5 kB

производитель
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.


FEATUREs
• AEC-Q101 qualified
• Fast-recovery body diode
• Extremely low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected


APPLICATIONs
• Switching applications


Номер в каталоге
Компоненты Описание
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производитель
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Automotive-grade N-channel 500 V, 0.10 Ω typ., 26 A MDmesh™ DM2 Power MOSFET in a D²PAK package
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Automotive-grade N-channel 500 V, 0.07 Ω typ., 35 A MDmesh™ DM2 Power MOSFET in a D²PAK package
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N-channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2 Power MOSFET in a TO-247 package
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N-channel 600 V, 0.260 Ω typ., 12 A MDMesh™ DM2 Power MOSFET in a D²PAK package ( Rev : 2016 )
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N-channel 600 V, 0.260 Ω typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package
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N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a DPAK package ( Rev : 2016 )
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N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a DPAK package
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N-channel 600 V, 370 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP package
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